High Performance Power Diodes on Silicon Carbide and Diamond
نویسنده
چکیده
Silicon Carbide and diamond Schottky barrier diodes (SBD) with an original and high efficiency termination are presented. The influences of termination parameters on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures by simulations. Design guidelines, based on simple analytical expressions, for ideal SBDs are included. Electrical forward and reverse characteristics, measured on SiC and diamond devices produced for the first time in Romania are also offered.
منابع مشابه
Ac-Dc-Dc Converter Using Silicon Carbide Schottky Diode
Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Like-diamond SiC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixte...
متن کاملConverter Using Silicon Carbide Schottky Diode
Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Like-diamond siC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixte...
متن کاملDc-dc Converter Using Silicon Carbide Schottky Diode
Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Likediamond SiC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixtee...
متن کاملAlGaN/GaN High-Electron-Mobility Transistors on Different Substrates
The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...
متن کاملNear-junction Thermal Management: Thermal Conduction in Gallium Nitride Composite Substrates
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology has received much attention in the past decade. The peak amplification power density of these devices is limited by heat transfer at the device, substrate, package, and system levels. Thermal resistances within micrometers of the transistor junction can limit efficient heat spread...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2007